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Polarons, quasiparticles from electron-phonon coupling, are crucial for material properties including high-temperature superconductivity and colossal magnetoresistance. However, scarce studies have investigated polaron formation in low-dimensional materials with phonon polarity and electronic structure transitions. In this work, we studied polarons of tellurene, composed of chiral Te chains. The frequency and linewidth of the A₁phonon, which becomes increasingly polar for thinner tellurene, change abruptly for thickness below 10 nanometers, where field-effect mobility drops rapidly. These phonon and transport signatures, combined with phonon polarity and band structure, suggest a crossover from large polarons in bulk tellurium to small polarons in few-layer tellurene. Effective field theory considering phonon renormalization in the small-polaron regime semiquantitatively reproduces the phonon hardening and broadening effects. This polaron crossover stems from the quasi–one-dimensional nature of tellurene, where modulation of interchain distance reduces dielectric screening and promotes electron-phonon coupling. Our work provides valuable insights into the influence of polarons on phononic, electronic, and structural properties in low-dimensional materials. 

Abstract 2D materials have exceptional physical and chemical characteristics, which makes them attractive for wearable technology. These characteristics include high carrier mobility, outstanding mechanical performance, abundant chemistry, and excellent electrostatic tunability. However, due to the high electron doping effect of interfacial charge impurities and intrinsic defects, most reported 2D materials are n‐type. Complementary electronic devices and high‐performance wearable sensors necessitate the development ofp‐type 2D semiconductors, which have superior electrocatalytic performance in oxidative processes compared to their n‐type counterparts. This review paper thoroughly accounts for recent advancements in 2Dp‐type semiconductor‐based wearable sensors, covering basic understandings, synthesis and fabrication, functional devices, and sensor performance insights. Finally, challenges and future opportunities for 2Dp‐type semiconductor‐based wearable sensors are discussed.